Silicon Infrared Charge Transfer Devices

Richard D. Nelson

doi:10.1117/12.955639

15 December 1977 Silicon Infrared Charge Transfer Devices

Richard D. Nelson

Proceedings Volume 0116, Solid-State Imaging Devices; (1977) https://doi.org/10.1117/12.955639
Event: 21st Annual Technical Symposium, 1977, San Diego, United States

Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between parallel and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Citation Download Citation

Richard D. Nelson "Silicon Infrared Charge Transfer Devices", Proc. SPIE 0116, Solid-State Imaging Devices, (15 December 1977); https://doi.org/10.1117/12.955639

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