Hexagonal boron nitride (hBN)—a 2D crystalline sheet consisting of alternating boron and nitrogen atoms—is emerging as a promising candidate for integrated photonics due to its exceptional properties. It is one of the widest bandgap materials (6 eV) with a transparency window including ultraviolet and visible regime. Importantly, hBN hosts ultra-bright single photon emitters (SPEs) operating at room temperature, which have attracted intense research attention since their discovery in 2016. hBN hosts a broad range of SPEs in energies showing exceptional brightness with several million counts at the detector. In addition, these emitters benefit from weak electron-phonon coupling indicated by the high intensity of zero phonon lines and weak intensity in the phonon sideband. This, together with the high degree of inherent chemical inertness, makes hBN an attractive candidate for next-generation photonic quantum integrated circuits.
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