InGaAs/InP SWIR unipolar barrier photodetector structure

Alex Chelny; Alex Savchuk; Oleg Rabinovich; Mikhail Mezhenny; Alex Aluyev; Sergey Didenko

doi:10.1117/12.2577018

5 March 2021 InGaAs/InP SWIR unipolar barrier photodetector structure

Alex Chelny, Alex Savchuk, Oleg Rabinovich, Mikhail Mezhenny, Alex Aluyev, Sergey Didenko

Proceedings Volume 11682, Optical Components and Materials XVIII; 1168204 (2021) https://doi.org/10.1117/12.2577018
Event: SPIE OPTO, 2021, Online Only

Abstract

The investigation of the doping level influence and p-n junction location in the barrier photodetector with InGaAS/AlInAs on InP was carried out. The detectivity value is determined by the differential resistance and it is related to the photosensitive layer doping level. I t was detected that the differential resistance is decreased due to doping. At the same time the peal detectivity can be reached at lower voltage. The barriers and contact layers thicknesses optimization are the important tools for quantum efficiency optimization.

Conference Presentation

Citation Download Citation

Alex Chelny, Alex Savchuk, Oleg Rabinovich, Mikhail Mezhenny, Alex Aluyev, and Sergey Didenko "InGaAs/InP SWIR unipolar barrier photodetector structure", Proc. SPIE 11682, Optical Components and Materials XVIII, 1168204 (5 March 2021); https://doi.org/10.1117/12.2577018

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