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5 March 2021 High-power AlGaN UVC LEDs using PhC reflector p-contact layers
Hideki Hirayama, Yukio Kashima, Eriko Matsuura, Noritoshi Maeda, Masafumi Jo, Yasushi Iwaisako, Takeshi Iwai, Mitsunori Kokubo, Takaharu Tashiro, Kanji Furuta, Ryuichiro Kamimura, Tamato Osada, Hideki Takagi, Yuuichi Kurashima, Tsugumu Nagano
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860X (2021) https://doi.org/10.1117/12.2579591
Event: SPIE OPTO, 2021, Online Only
Abstract
We demonstrated an enhancement of light-extraction efficiency (LEE) in an AlGaN UVC light-emitting diode (LED) using photonic-crystal (PhC)-reflector fabricated on a p-GaN contact layer, which was introduced to realize both of low resistivity and high-reflectivity in p-contact layer. We fabricated an AlGaN UVC-LED with PhC-reflector on p-GaN contact layer, and confirmed that the external quantum efficiency (EQE) was increased by 1.7 times by introducing PhC-reflector. We also fabricated flip-chip UVC LED with PhC-reflector on p-contact layer and obtained more than 50 mW output power.
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Hideki Hirayama, Yukio Kashima, Eriko Matsuura, Noritoshi Maeda, Masafumi Jo, Yasushi Iwaisako, Takeshi Iwai, Mitsunori Kokubo, Takaharu Tashiro, Kanji Furuta, Ryuichiro Kamimura, Tamato Osada, Hideki Takagi, Yuuichi Kurashima, and Tsugumu Nagano "High-power AlGaN UVC LEDs using PhC reflector p-contact layers", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860X (5 March 2021); https://doi.org/10.1117/12.2579591
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KEYWORDS
Reflectors
Light emitting diodes
Resistance
Absorption
External quantum efficiency
Photonic crystals
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