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5 March 2021 Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers
Ryota Ishii, Mitsuru Funato, Yoichi Kawakami
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861S (2021) https://doi.org/10.1117/12.2576763
Event: SPIE OPTO, 2021, Online Only
Abstract
Photoluminescence spectroscopy using a scanning near-field optical microscope (SNOM) is a powerful technique to study luminescence properties of III-Nitride semiconductors. To date, we have developed a SNOM with an excitation and a detection wavelength of 210 nm and >220 nm, respectively.[1] The deep-ultraviolet (DUV) SNOM has the shortest operation wavelength ever reported and visualizes the localized emission nature of Al-rich AlGaN quantum wells with a spatial resolution exceeding 150 nm. In the presentation, recent progresses of our study using the DUV-SNOM are given. [1] Ishii et al., APL Photonics 4, 070801 (2019).
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Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami "Recent progress in deep-ultraviolet scanning near-field optical microscope: a tool visualizing the luminescence properties of Al-rich AlGaN active layers", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861S (5 March 2021); https://doi.org/10.1117/12.2576763
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KEYWORDS
Near field scanning optical microscopy
Deep ultraviolet
Luminescence
Optical microscopes
Visualization
Spectroscopy
Light emitting diodes
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