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5 March 2021 Impact of point defects on Auger recombination in InGaN/GaN quantum well in the efficiency droop regime
Wei Liu, Camille Haller, Yao Chen, Thomas Weatherley, Jean-François Carlin, Gwénolé Jacopin, Raphaël Butté, Nicolas Grandjean
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116861W (2021) https://doi.org/10.1117/12.2577971
Event: SPIE OPTO, 2021, Online Only
Abstract
We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the active layer is tuned by varying the thickness of an InAlN underlayer. When the defect density is increased, apart from Shockley–Read–Hall (SRH) and standard Auger recombination, introducing an extra defect-assisted Auger process is required to reconcile the discrepancy observed between the usual ABC model and experimental data. We derive a linear dependence between the SRH coefficient and the bimolecular defect-assisted Auger coefficient, which suggests that the generated defects can act as scattering centers responsible for indirect Auger processes. Our results further suggest that the defect-assisted Auger recombination is expected to be all the more critical in green to red III-nitride light-emitting diodes due to their reduced radiative rate.
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Wei Liu, Camille Haller, Yao Chen, Thomas Weatherley, Jean-François Carlin, Gwénolé Jacopin, Raphaël Butté, and Nicolas Grandjean "Impact of point defects on Auger recombination in InGaN/GaN quantum well in the efficiency droop regime", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116861W (5 March 2021); https://doi.org/10.1117/12.2577971
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KEYWORDS
Quantum wells
Quantum efficiency
Scattering
Data modeling
Gallium nitride
Internal quantum efficiency
Light emitting diodes
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