Presentation
5 March 2021 Widely tunable hybrid lasers at 2.6 μm wavelength based on micron-scale silicon-on-insulator waveguide technology and GaSb gain chips
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Abstract
Recent progress in developing tunable mid-IR (2.6 um range) integrated hybrid lasers, are demonstrated. the hybrid laser includes gain chips based on AlGaInAsSb/GaSb quantum wells and tunable reflectors based on micron-scale silicon on insulator integrated photonics platform. The devices exhibit milliwatt-level average power, 10 mW of peak powers and tuning ranges up to 60 nm. Factors limiting tuning range, spectral purity and maximum power are discussed. The demonstrated platform enables realization of tunable lasers for a wide range of applications requiring high performance light sources with emission wavelengths from 1.8 µm to 3 µm and beyond.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jukka Viheriälä, Samu-Pekka Ojanen, Eero Koivusalo, Nouman Zia, Mikko T. Harjanne, Matteo Cherchi, Timo Aalto, and Mircea Guina "Widely tunable hybrid lasers at 2.6 μm wavelength based on micron-scale silicon-on-insulator waveguide technology and GaSb gain chips", Proc. SPIE 11689, Integrated Optics: Devices, Materials, and Technologies XXV, 116890U (5 March 2021); https://doi.org/10.1117/12.2576493
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KEYWORDS
Laser applications

Silicon

Tunable lasers

Waveguides

Gallium antimonide

Hybrid silicon lasers

Semiconductor lasers

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