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We demonstrated an enhancement of light-extraction efficiency (LEE) in an AlGaN UVC light-emitting diode (LED) using photonic-crystal (PhC)-reflector fabricated on a p-GaN contact layer, which was introduced to realize both of low resistivity and high-reflectivity in p-contact layer. We fabricated an AlGaN UVC-LED with PhC-reflector on p-GaN contact layer, and confirmed that the external quantum efficiency (EQE) was increased by 1.7 times by introducing PhC-reflector. We also fabricated flip-chip UVC LED with PhC-reflector on p-contact layer and obtained more than 50 mW output power.
Hideki Hirayama,Yukio Kashima,Eriko Matsuura,Noritoshi Maeda, andMasafumi Jo
"Progress on high-power UVC LEDs by increasing light-extraction efficiency", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060G (5 March 2021); https://doi.org/10.1117/12.2579593
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