Paper
12 March 2021 Improving the detectivity of MoS2 photodetector based on metal-semiconductor interface modification
Author Affiliations +
Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 1176377 (2021) https://doi.org/10.1117/12.2587424
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China
Abstract
Mechanical transfer electrode can effectively reduce the contact surface between the electrode and semiconductor material, however this method has not been applied to improve the performance of photoelectric devices. In this paper, MoS2 thin film photodetectors are fabricated by this novel method. Compared with the MoS2 thin film photodetectors prepared by the traditional hot evaporation method, the dark current of the transfer device decreased by nearly one order of magnitude, reaching 4.6 × 10-7 A, and the detectivity also increased significantly to 2.1 × 1010 Jones. All these results show that the mechanical transfer electrode can optimize the contact interface between the electrode and semiconductor material to achieve a higher performance photodetector.
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Xiaotian Zhu, Fengyuan Lin, Zhihong Zhang, Xue Chen, Hao Huang, and Zhipeng Wei "Improving the detectivity of MoS2 photodetector based on metal-semiconductor interface modification", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 1176377 (12 March 2021); https://doi.org/10.1117/12.2587424
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