Low-lever light detection scheme based on the novel gate-controlled lateral thyristor

Keyang Sun; Liyang Pan

doi:10.1117/12.2588548

12 March 2021 Low-lever light detection scheme based on the novel gate-controlled lateral thyristor

Keyang Sun, Liyang Pan

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 11763AB (2021) https://doi.org/10.1117/12.2588548
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

The silicon-based gate-controlled lateral thyristor (GC-LT) which takes advantage of high sensitivity at low-lever light intensity is investigated by numerical simulation. The novel gate-controlled lateral thyristor structure is designed with sidewall control gates and base contacts. An operation method of using appropriate gate bias and base bias is proposed to safely establish a dynamic sampling mode. The relationship of the time to trigger and switch the detector on and the light intensities is quantified analytically. Simulation results show that the gated-controlled lateral thyrisor has a high sensitivity to extremely low-lever light intensities such as 1×10^-9 W/cm² at V_G1=0.6V due to the coupling cycle amplification between cross-coupled bipolar transistors inside the structure.

Citation Download Citation

Keyang Sun and Liyang Pan "Low-lever light detection scheme based on the novel gate-controlled lateral thyristor", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 11763AB (12 March 2021); https://doi.org/10.1117/12.2588548

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