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1 August 2021 Growth of topological insulator nanoparticles by droplet epitaxy
Sivakumar Vishnuvardhan Mambakkam, Stephanie Law
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Proceedings Volume 11800, Low-Dimensional Materials and Devices 2021; 118000D (2021) https://doi.org/10.1117/12.2596418
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
Topological insulators (TIs) are a class of materials which exhibit unique electronic states delocalized on the outer surface of the material. Due to the strong spin-orbit coupling in TIs, these states are spin-polarized and robust against scattering. The robust nature of these states could present a potential solution to the problem of decoherence in qubits. This has motivated research into creating quantum information storage/transport devices using TIs. In order to create such a device, we first must understand how to isolate these states energetically, and this can be done using quantum confinement. Our first step involves the creation of quantum confined TIs. Here, we report on the growth of TI quantum dots grown by droplet epitaxy. We chose the TI Bi2Se3, a commonly studied 3D topological insulator, and growths were performed on GaAs in a molecular beam epitaxy chamber. We varied the growth conditions of bismuth deposition time and substrate temperature to determine the degree to which TI nanoparticle dimensions could be controlled. Within the growth window, we observed particles in the range of 5-15 nm tall and 500-3000 nm2 in area (equivalent circular radius ~12-30 nm). We observed various trends in particle height, area, density and polydispersity as a result of varying growth conditions and adjusting the growth procedure (ex. adding a long anneal step between bismuth and selenium deposition steps). Overall, these results will be helpful in aiding further development of topological insulator devices.
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Sivakumar Vishnuvardhan Mambakkam and Stephanie Law "Growth of topological insulator nanoparticles by droplet epitaxy", Proc. SPIE 11800, Low-Dimensional Materials and Devices 2021, 118000D (1 August 2021); https://doi.org/10.1117/12.2596418
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KEYWORDS
Epitaxy
Nanoparticles
Bismuth
Particles
Molecular beam epitaxy
Quantum communications
Quantum dots
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