Paper
15 February 1990 Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems
G. Lucovsky, S. S. Kim, D. V. Tsu, G. N. Parsons, J. T. Fitch
Author Affiliations +
Proceedings Volume 1188, Multichamber and In-Situ Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963948
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States
Abstract
This paper describes the formation of heterostructure devices using multichamber, integrated-processing thin-film deposition systems with UHV-compatible inter-chamber transfer. We describe the application of remote plasma-enhanced chemical-vapor deposition (Remote PECVD) for deposition of semiconducting and dielectric thin films in representative device structures. Special attention is directed to: i) deposition conditions necessary for control of thin-film and interface chemistry; and ii) post-deposition-annealing for the stabilization of physical and electronic properties of the heterostructures, including the interfaces between the constituent layers.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Lucovsky, S. S. Kim, D. V. Tsu, G. N. Parsons, and J. T. Fitch "Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems", Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); https://doi.org/10.1117/12.963948
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Cited by 2 scholarly publications and 4 patents.
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KEYWORDS
Silicon

Plasma enhanced chemical vapor deposition

Plasma

Dielectrics

Oxides

Silica

Gases

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