Paper
24 November 2021 InAsSb/AlAsSb nBn HOT focal plane array
Peng Zhou, Ming Liu, Tao Wen, Yanlei Xing, Weirong Xing
Author Affiliations +
Proceedings Volume 12061, AOPC 2021: Infrared Device and Infrared Technology; 1206105 (2021) https://doi.org/10.1117/12.2601372
Event: Applied Optics and Photonics China 2021, 2021, Beijing, China
Abstract
With the increasing demanding for miniaturization utility in infrared detectors, high operating temperature (HOT) and reduced size, weight and power consumption (SWaP) of infrared detectors are getting attention. A “diode-like” nBn barrier structure which can eliminate SRH generation-recombination dark current and operator at 130K has been realized in our lab. InAsSb/AlAsSb materials are grown by means of epitaxial on lattice-matched GaSb substrate. Material and device technology is being discussed, and a 30μm pitch 320×256 Focal Plane Array is displayed. NETD of this device is 14.4mK and the cut-off wavelength is 4.16μm at 130K. The non-uniformity increased form 2.88% to 3.55% during the temperature increased form 80K to 130K. At the end, photos taken by this FPA at 80K, 130K and 150K are displayed.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Zhou, Ming Liu, Tao Wen, Yanlei Xing, and Weirong Xing "InAsSb/AlAsSb nBn HOT focal plane array", Proc. SPIE 12061, AOPC 2021: Infrared Device and Infrared Technology, 1206105 (24 November 2021); https://doi.org/10.1117/12.2601372
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