Paper
24 November 2021 Improved structural and electrical properties of non-polar a-plane p-AlGaN epi-layers with pulsed mass flow supply technique
Aijie Fan, Shuchang Wang, Xiong Zhang, Yiping Cui
Author Affiliations +
Proceedings Volume 12066, AOPC 2021: Micro-optics and MOEMS; 120660R (2021) https://doi.org/10.1117/12.2604424
Event: Applied Optics and Photonics China 2021, 2021, Beijing, China
Abstract
High conductivity of non-polar a-plane p-type Mg-doped AlGaN epi-layers with Al composition up to 0.53 were grown by metal organic chemical vapor deposition (MOCVD). The p-AlGaN epi-layers with the Al composition varied from 0 to 0.53 were studied by various characterizations. In particular, the non-polar a-plane Mg-doped p-AlGaN epi-layers, using a novel MOCVD growth technique featured with pulsed mass flow supply (PMFS) of the metal organic-source, exhibited a high conductivity in the Al-rich p-AlGaN epi-layers. It was revealed that the electrical conductivity, surface morphology as well as crystalline quality were significantly enhanced due to the introduction of the newly-developed PMFS technique during the growth of the a-plane p-AlGaN epi-layers.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aijie Fan, Shuchang Wang, Xiong Zhang, and Yiping Cui "Improved structural and electrical properties of non-polar a-plane p-AlGaN epi-layers with pulsed mass flow supply technique", Proc. SPIE 12066, AOPC 2021: Micro-optics and MOEMS, 120660R (24 November 2021); https://doi.org/10.1117/12.2604424
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KEYWORDS
Aluminum

Gallium

Crystals

Metalorganic chemical vapor deposition

Scanning electron microscopy

Magnesium

Aluminum nitride

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