Paper
20 December 2021 Fabrication and investigation of graphite/p-InP Schottky-type heterojunction
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Proceedings Volume 12126, Fifteenth International Conference on Correlation Optics; 121261I (2021) https://doi.org/10.1117/12.2615780
Event: Fifteenth International Conference on Correlation Optics, 2021, Chernivtsi, Ukraine
Abstract
Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV
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Serhii I. Kuryshchuk, Mykhailo M. Solovan, and Andrii I. Mostovyi "Fabrication and investigation of graphite/p-InP Schottky-type heterojunction", Proc. SPIE 12126, Fifteenth International Conference on Correlation Optics, 121261I (20 December 2021); https://doi.org/10.1117/12.2615780
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KEYWORDS
Heterojunctions

Diodes

Resistance

Indium

Interfaces

Graphene

Radiation effects

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