Characterization of phase transition in few-layer MoTe2 induced by laser irradiation

Hang Yang; Jun Luo; Yongbo Xuan; Bi Wu

doi:10.1117/12.2623074

27 March 2022 Characterization of phase transition in few-layer MoTe₂ induced by laser irradiation

Hang Yang, Jun Luo, Yongbo Xuan, Bi Wu

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 121692Q (2022) https://doi.org/10.1117/12.2623074
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

Phase transition can be used to alter the properties of a material without adding any additional atoms and are therefore of significant technological value. Most two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit more than one structural phase, leading to a number of remarkable physics and potential device applications beyond graphene. Here, we demonstrated a feasible route to trigger 2H-to-1T′ phase transition in few-layer molybdenum ditelluride (MoTe2) by laser irradiation. The Raman spectrum demonstrates a distinct change in few-layer MoTe₂ after the laser irradiation (two prominent peaks at 125 cm-1 and 140 cm⁻¹), which undoubtedly shows that a phase transition has occurred in few-layer MoTe₂. Additionally, Raman mapping results reveals a high spatial resolution without any contamination by laser-irradiation-driven method. Last, we demonstrate that the metallic 1T′ phase of MoTe₂ can be locally induced on semiconducting 2H phase nanosheets, thus decreasing contact resistances to 13.2 kΩ at zero gate bias. These results offer the opportunities for developing the next generation of high-performance nanoelectronics and optoelectronics based on MoTe_2.

Citation Download Citation

Hang Yang, Jun Luo, Yongbo Xuan, and Bi Wu "Characterization of phase transition in few-layer MoTe₂ induced by laser irradiation", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 121692Q (27 March 2022); https://doi.org/10.1117/12.2623074

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KEYWORDS

Laser irradiation

Raman spectroscopy

Resistance

Semiconductors

Chemical species

Electrodes

Tellurium

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