Effects of different passivation and etching methods on the dark current of InAs/GaSb long-wave detectors

Zhenming Ji; Xubo Zhu; Yingjie He; Ailiang Cui; Peng Wei; Yanqiu Lyu

doi:10.1117/12.2625096

27 March 2022 Effects of different passivation and etching methods on the dark current of InAs/GaSb long-wave detectors

Zhenming Ji, Xubo Zhu, Yingjie He, Ailiang Cui, Peng Wei, Yanqiu Lyu

Proceedings Volume 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications; 1216983 (2022) https://doi.org/10.1117/12.2625096
Event: Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 2021, Kunming, China

Abstract

The InAs/GaSb superlattice infrared detectors have attracted more and more attention due to they have the properties of adjustable energy band, high uniformity, low Auger recombination, tunneling current, and high quantum efficiency. At present, it is widely used in the preparation of long-wave infrared detectors. This paper studies the effects of different passivation methods on device performance. The dark current density of the device which uses silicon nitride film as the passivation layer can be reduced to 5.01×10^-5A/cm² , and its maximum impedance can reach 421 Ω·cm² , then we used energy band theory to explain the reason for this phenomenon. We believe that the occurrence of this phenomenon is related to the wider band gap of nitride, because the wider forbidden band can suppress the generation of surface leakage current, thereby reducing the dark current density and improving the performance of the device.

Citation Download Citation

Zhenming Ji, Xubo Zhu, Yingjie He, Ailiang Cui, Peng Wei, and Yanqiu Lyu "Effects of different passivation and etching methods on the dark current of InAs/GaSb long-wave detectors", Proc. SPIE 12169, Eighth Symposium on Novel Photoelectronic Detection Technology and Applications, 1216983 (27 March 2022); https://doi.org/10.1117/12.2625096

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