Failure mechanisms in monolithic AlGaAs laser devices

William J. Fritz; Thomas H. Faltus; Jack B. Yahl

doi:10.1117/12.18258

1 May 1990 Failure mechanisms in monolithic AlGaAs laser devices

William J. Fritz, Thomas H. Faltus, Jack B. Yahl

Proceedings Volume 1219, Laser Diode Technology and Applications II; (1990) https://doi.org/10.1117/12.18258
Event: OE/LASE '90, 1990, Los Angeles, CA, United States

Abstract

Failed or degraded monolithic linear laser diode arrays and integrated optoelectronic devices were analyzed to identify failure mechanisms that limit reliability and lifetime. The primary failure mechanism identified in the laser diode arrays was 110-line-oriented dark line defects behind the facet. The cause was due to operation at too long of a pulse width at high peak optical power levels. In addition, facet anomalies contributed to the failure in some cases. Failure mechanisms identified in integrated optoelectronic devices were bulk degradation due to surface damage, facet-related mechanisms, and heat sink bond degradation.

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William J. Fritz, Thomas H. Faltus, and Jack B. Yahl "Failure mechanisms in monolithic AlGaAs laser devices", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18258

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