Presentation + Paper
1 December 2022 Does high-NA EUV require tighter mask roughness specifications: a simulation study
Author Affiliations +
Abstract
In follow-up of related contributions at the past three symposium editions, our simulation study arrived at this question. As shown before, (local) mask defects and non-local mask deficiencies (NLMDs) act as triggers for increased stochastic failure probability on the EUV imaged resist pattern on wafer. Mask roughness is such an NLMD. The three types studied comprise multilayer (ML) ripple, which relates to a non-fully planar coating of the ML mask stack, mask absorber lineedge roughness and roughening of the ML. For the latter the study was restricted to roughening of the ruthenium capping layer only, which may already happen during the patterning step of the absorber during mask making. Each of the 3 roughness types is studied standalone and in combination. An alternative technique is presented that allows to define tolerance limits for mask roughness, without requiring massive, time-consuming stochastic simulations. It is based on studying how roughness-induced background light is passing through the projection optics. Our results, for anamorphic imaging at 0.55 NA, suggest the importance of limiting mask roughness beyond state-of-the-art.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rik Jonckheere and Lawrence S. Melvin III "Does high-NA EUV require tighter mask roughness specifications: a simulation study", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 122920L (1 December 2022); https://doi.org/10.1117/12.2643247
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KEYWORDS
Photomasks

Line edge roughness

Stochastic processes

Visualization

Semiconducting wafers

Failure analysis

Extreme ultraviolet

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