Paper
9 September 2022 Ge-profile design of SiGe base for high frequency performance of SiGe HPT
Xiaoting Shen, Hongyun Xie, Liang Chen, Dong Han, Xiaoxiong Yang, Wanrong Zhang
Author Affiliations +
Proceedings Volume 12328, Second International Conference on Optics and Image Processing (ICOIP 2022); 123280L (2022) https://doi.org/10.1117/12.2644356
Event: Second International Conference on Optics and Image Processing (ICOIP 2022), 2022, Taian, China
Abstract
Current high speed photon communication system has a big demand for high performance optical detector, especially the high speed silicon-based detector. In this paper, a SiGe heterojunction phototransistor with different Ge-profile in the SiGe base is designed for high optical characteristic frequency. Influences of three types of Ge-distributions (box, triangular, and trapezoidal distribution) and different Ge-content which is in the range of 15%~35% on the frequency performance of SiGe heterojunction phototransistors (HPTs) are analyzed in this paper. A characteristic frequency of 10.52GHz for an 850 nm incident light is achieved by using triangular distribution with 20% Ge-content in the SiGe base.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoting Shen, Hongyun Xie, Liang Chen, Dong Han, Xiaoxiong Yang, and Wanrong Zhang "Ge-profile design of SiGe base for high frequency performance of SiGe HPT", Proc. SPIE 12328, Second International Conference on Optics and Image Processing (ICOIP 2022), 123280L (9 September 2022); https://doi.org/10.1117/12.2644356
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KEYWORDS
Germanium

Silicon

Phototransistors

Heterojunctions

Interfaces

Electrons

Sensors

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