Presentation + Paper
13 March 2023 Monolithic coupling between high- and mid-index, multi-micron waveguides for O-band applications
Author Affiliations +
Proceedings Volume 12426, Silicon Photonics XVIII; 124260K (2023) https://doi.org/10.1117/12.2648634
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this work, a coupling strategy between mid-index SiNx and high-index active waveguides on the same silicon chip is proposed. To that aim, a sophisticated proof-of-concept integration between N-rich SiN and SOI micrometric waveguides is demonstrated achieving a <0.5 dB coupling for both TE/TM polarisations. The optical tunability of SiNx allows the mitigation of the mid-high refractive index discrepancy by interposing a SiO2/Si-rich SiN double-layer anti-reflective coating, attaining back-reflections close to −20 dB. On that basis, it is shown numerically that a sub-dB interconnection between multiple-quantum well/dot stratified stacks and a silicon nitride passive waveguide is achievable, while keeping the introduced back-reflection level below −30 dB.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilias Skandalos, Thalía Domínguez Bucio, Lorenzo Mastronardi, Yaonan Hou, Teerapat Rutirawut, and Frederic Gardes "Monolithic coupling between high- and mid-index, multi-micron waveguides for O-band applications", Proc. SPIE 12426, Silicon Photonics XVIII, 124260K (13 March 2023); https://doi.org/10.1117/12.2648634
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KEYWORDS
Silicon nitride

Waveguides

Silicon

Fabrication

Interfaces

Polarization

Refractive index

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