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15 March 2023 High-power with single-lobe beam of 1.3-μm InP-based double-lattice photonic-crystal surface-emitting lasers
Yuhki Itoh, Naoya Kono, Kosuke Fujii, Hiroyuki Yoshinaga, Naoki Fujiwara, Makoto Ogasawara, Rei Tanaka, Hideki Yagi, Masaki Yanagisawa, Masahiro Yoshida, Takuya Inoue, Menaka De Zoysa, Kenji Ishizaki, Susumu Noda
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Proceedings Volume 12440, Novel In-Plane Semiconductor Lasers XXII; 124400E (2023) https://doi.org/10.1117/12.2648858
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We have demonstrated a single-mode lasing with a narrow single-lobe beam emission from InP-based double-lattice photonic-crystal surface-emitting lasers (PCSELs) in a wide temperature range from 25°C to 80°C under CW condition. A high output power of 240 mW is achieved at a temperature of 25°C. The lasing occurs even at a high temperature of 80°C, and the output power is 48 mW. The single-mode lasing and the narrow single-lobe beam with divergence angle below 1.5°, which is a unique feature of PCSELs, are maintained even at a high temperature of 80°C.
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Yuhki Itoh, Naoya Kono, Kosuke Fujii, Hiroyuki Yoshinaga, Naoki Fujiwara, Makoto Ogasawara, Rei Tanaka, Hideki Yagi, Masaki Yanagisawa, Masahiro Yoshida, Takuya Inoue, Menaka De Zoysa, Kenji Ishizaki, and Susumu Noda "High-power with single-lobe beam of 1.3-μm InP-based double-lattice photonic-crystal surface-emitting lasers", Proc. SPIE 12440, Novel In-Plane Semiconductor Lasers XXII, 124400E (15 March 2023); https://doi.org/10.1117/12.2648858
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KEYWORDS
High power lasers
Photonic crystals
Continuous wave operation
Dry etching
Semiconductor lasers
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