Graphene infrared photodetectors using type-II InAs/InGaSb superlattices

Shoichiro Fukushima; Masaaki Shimatani; Shinpei Ogawa

doi:10.1117/12.2663036

13 June 2023 Graphene infrared photodetectors using type-II InAs/InGaSb superlattices

Shoichiro Fukushima, Masaaki Shimatani, Shinpei Ogawa

Proceedings Volume 12534, Infrared Technology and Applications XLIX; 125341L (2023) https://doi.org/10.1117/12.2663036
Event: SPIE Defense + Commercial Sensing, 2023, Orlando, Florida, United States

Abstract

Graphene infrared (IR) photodetectors are promising devices that exploit the unique optoelectronic properties of graphene, such as broadband light absorption, rapid response, and high-chemical stability. However, graphene has low absorbance (2.3%), which limits its photo-responsivity. This study investigated the middle-wavelength infrared (MWIR) and long-wavelength IR (LWIR) responsivity enhancements in graphene photodetectors with type-II superlattices (T2SL) employed as photosensitizers. Graphene field-effect transistors (GFETs) were fabricated with the InAs/InGaSb SL photosensitizers on a GaSb substrate. The device was vacuum-cooled and then exposed to light using a filament lamp (wavelength ranges: 3–5 μm and 8–12 μm). The device exhibited MWIR and LWIR photoresponses at 77 K, whereas no photoresponse was observed when photosensitizers were not used. The observed current variations in the photosensitizers and the substrate suggest that photocarriers in the InAs/InGaSb SL modulate the gate voltages on the GFETs, thereby producing the photogating effect. The LWIR photoresponse in conjunction with the photogating effect was enhanced by a factor of 1500 compared with that without the photosensitizers. The results obtained in this study are expected to contribute to the development of high-performance graphene-based IR image sensors.

Conference Presentation

Citation Download Citation

Shoichiro Fukushima, Masaaki Shimatani, and Shinpei Ogawa "Graphene infrared photodetectors using type-II InAs/InGaSb superlattices", Proc. SPIE 12534, Infrared Technology and Applications XLIX, 125341L (13 June 2023); https://doi.org/10.1117/12.2663036

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