Paper
1 August 1990 Subpicosecond dynamics of hot carrier relaxation in InP and GaAs
Xiang-Qian Zhou, Uli Lemmer, Klaus Seibert, Gyu Cheon Cho, Waldemar Kuett, Karl Wolter, Heinrich Kurz
Author Affiliations +
Proceedings Volume 1268, Applications of Ultrashort Laser Pulses in Science and Technology; (1990) https://doi.org/10.1117/12.20334
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Time resolved measurements of the hot carrier relaxation in nP have been performed at room temperature using four different femtosecond techniques. At carrier densities between 1016cm3 and a few times 1018cm3 carrier-carrier scattering has been found to dominate the initial relaxation ensuring the internal thermalization of electrons and holes on a time scale of 1OO'2OO fs. At high excitation densities the subpicosecond cooling of the electrons is found to be clearly slower than expected from simple calculations of the e-LO-phonon interaction. The different relaxation behaviour in GaAs is attributed to strong intervalley scattering mechanisms.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiang-Qian Zhou, Uli Lemmer, Klaus Seibert, Gyu Cheon Cho, Waldemar Kuett, Karl Wolter, and Heinrich Kurz "Subpicosecond dynamics of hot carrier relaxation in InP and GaAs", Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); https://doi.org/10.1117/12.20334
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electrons

Luminescence

Gallium arsenide

Scattering

Solids

Ultrafast phenomena

Absorption

Back to Top