Ultrafast relaxation dynamics of photoexcited carriers in GaAs

Ting Gong; William L. Nighan Jr.; Philippe M. Fauchet

doi:10.1117/12.20327

1 August 1990 Ultrafast relaxation dynamics of photoexcited carriers in GaAs

Ting Gong, William L. Nighan Jr., Philippe M. Fauchet

Proceedings Volume 1268, Applications of Ultrashort Laser Pulses in Science and Technology; (1990) https://doi.org/10.1117/12.20327
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

We report time-resolved pump-probe measurements of both absorption and refractive index for GaAs thin films with 80 fs time resolution. The probe photon energies are near the band-edge and near the initial excited states, and photoexcited carrier densities are varied from 1017 to 1019 cm3. Our results reveal the instantaneous band gap renormalization and the importance of carrier-carrier scattering and intervalley scattering. Mechanisms which cause an ultrafast change in refractive index are also discussed.

Citation Download Citation

Ting Gong, William L. Nighan Jr., and Philippe M. Fauchet "Ultrafast relaxation dynamics of photoexcited carriers in GaAs", Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); https://doi.org/10.1117/12.20327

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