Improved design of AlAs/GaAs resonant tunneling diodes

Peng Cheng; James S. Harris Jr.

doi:10.1117/12.20763

1 October 1990 Improved design of AlAs/GaAs resonant tunneling diodes

Peng Cheng, James S. Harris Jr.

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20763
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We have investigated the effects of complex barrier structures in double barrier resonant tunneling diodes (DBRTDs). The largest room temperature peak-to-valley current ratios (PVCR) to date have been observed for AlGaAs/GaAs DBRTD. PVCRs as high as 5. 1 were observed in AlAs/GaAs DBRTD with an AL14Ga86As chair barrier in the cathode. We attribute the improvement in the PVCR to the chair barrier in the cathode which significantly reduces the valley current. The effects of a real, spatially separated Al,14Ga086As barrier in the anode and cathode sides of the DBRTDs were also investigated and a PVCR as high as 4.8 was observed when the A10• 14Ga86As barrier was on the anode side.

Citation Download Citation

Peng Cheng and James S. Harris Jr. "Improved design of AlAs/GaAs resonant tunneling diodes", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20763

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