Photoluminescence analysis of ultrathin quantum wells

Mitsuaki Yano; Takanori Iwawaki; Hisakazu Yokose; Akihiko Kawaguchi; Yoshio Iwai; Masataka Inoue

doi:10.1117/12.20749

1 October 1990 Photoluminescence analysis of ultrathin quantum wells

Mitsuaki Yano, Takanori Iwawaki, Hisakazu Yokose, Akihiko Kawaguchi, Yoshio Iwai, Masataka Inoue

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20749
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Three types of ultrathin single quantum well structure grown by MBE , GaAs/InAs/GaAs (type I), GaAs/GaSb/GaAs (typell , staggered) and GaSb/InAs/GaSb (type II , misaligned) have been studied by photolusinescence (PL) measurements to understand the band alignment and effects of lattice strain at the interface. Observed PL spectra are discussed in conjunction with the interface structure probed by RHEED analysis during the MBE growth. The well width dependence of PL energy is cospared with the theoretical results based on a finite potential well model.

Citation Download Citation

Mitsuaki Yano, Takanori Iwawaki, Hisakazu Yokose, Akihiko Kawaguchi, Yoshio Iwai, and Masataka Inoue "Photoluminescence analysis of ultrathin quantum wells", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20749

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