Tolerance analysis of local evanescent array coupled (LEAC) sensors fabricated in silicon photonics foundries

Cameron D Holmes; Kevin L. Lear

doi:10.1117/12.3009540

11 March 2024 Tolerance analysis of local evanescent array coupled (LEAC) sensors fabricated in silicon photonics foundries

Cameron D Holmes, Kevin L. Lear

Author Affiliations +

Proceedings Volume 12880, Physics and Simulation of Optoelectronic Devices XXXII; 1288008 (2024) https://doi.org/10.1117/12.3009540
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Utilizing Beam Propagation Method (BPM) simulations, this study examines the layer thickness tolerances of Local Evanescent Array Coupled (LEAC) biosensors to be fabricated in silicon photonics foundries using conventional processes targeting 1.55 μm devices. The simulations reveal that sensitivity increases with lower cladding thickness while decreasing with core thickness. Additionally, the study investigates the biosensor's response to bulk and thin biofilm layers, offering nuanced insights with practical implications, especially for nanoscale-bound biological samples. In contrast to earlier fabrication and characterization work on LEAC sensors employing thick silicon detectors at visible wavelengths, simulations conducted at the long wavelength process with germanium photodetectors show an intriguing resonance phenomenon between the core waveguide and photodetector. This resonance allows for higher absorption and thus shorter sensor length but also requires excessively tight tolerances on detector thickness. To address this challenge, structures have been explored to shift the resonance, enhancing tolerance to variations in germanium photodiode layer thickness.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Cameron D Holmes and Kevin L. Lear "Tolerance analysis of local evanescent array coupled (LEAC) sensors fabricated in silicon photonics foundries", Proc. SPIE 12880, Physics and Simulation of Optoelectronic Devices XXXII, 1288008 (11 March 2024); https://doi.org/10.1117/12.3009540

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