Design of 1×16 optical phased array in 45-nm SOI CMOS

Youngin Kim; Hua Wang

doi:10.1117/12.3000704

12 March 2024 Design of 1×16 optical phased array in 45-nm SOI CMOS

Youngin Kim, Hua Wang

Proceedings Volume 12891, Silicon Photonics XIX; 1289106 (2024) https://doi.org/10.1117/12.3000704
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We present a 1×16 optical phased array (OPA) in state-of-the-art 45-nm SOI CMOS technology for free-space optical communication and imaging. Width and grating period of the antenna is optimized to have longitudinal radiation angle of 10˚ and radiation efficiency of 35.3 % at an operating wavelength of 1310 nm. To reduce insertion loss of the OPA, a thermo-optic phase shifter based on n-i-n junction is used. The proposed OPA has been fabricated in 45-nm electronic-photonic process from GlobalFoundries, which is intended to fabricate both integrated photonics and electronics. Far-field measurement result shows 1-D two-sided beam-steering angle of 34.3˚ in transversal direction and full-width half-maximum beam-width of 3.7˚.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Youngin Kim and Hua Wang "Design of 1×16 optical phased array in 45-nm SOI CMOS", Proc. SPIE 12891, Silicon Photonics XIX, 1289106 (12 March 2024); https://doi.org/10.1117/12.3000704

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