Paper
30 April 2024 Modeling and simulation of the ion implantation metrology based on pump-probe technology
Author Affiliations +
Proceedings Volume 13154, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies; 1315408 (2024) https://doi.org/10.1117/12.3016208
Event: Sixth Conference on Frontiers in Optical Imaging Technology and Applications (FOI2023), 2023, Nanjing, JS, China
Abstract
The photomodulated optical reflectance (PMOR) technology has shown excellent performance in measuring the sample’s doping profile and annealing uniformity after ion implantation. However, during PMOR detection, the physical process of interaction between laser and material can be quite complex. Therefore, it is significant to study a complete physical model of ion implantation measurement for the measurement accuracy of the doping profile. In this study, we have developed a comprehensive physical model that combines physical models for the generation and detection of excess carriers and excess temperature. For the samples with the same doping concentration and different junction depths, the finite element simulation results can distinguish three different doping profiles, which verifies the feasibility of the model in monitoring the doping profile. This study provides theoretical support for the measurement of the doping profile after ion implantation.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yong Sun, Zhongyu Wang, Jing Min, Xiuguo Chen, Zirong Tang, and Shiyuan Liu "Modeling and simulation of the ion implantation metrology based on pump-probe technology", Proc. SPIE 13154, Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies, 1315408 (30 April 2024); https://doi.org/10.1117/12.3016208
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KEYWORDS
Doping

Ion implantation

Reflectivity

Statistical modeling

Reflection

Chemical elements

Diffusion

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