Excimer laser assisted deposition of SiO2-structures on semiconductor substrates from siliconorganic films

Vladimir G. Ageev; Dang Quoc Trung; Vitali I. Konov; A. V. Kuzmichov; A. I. Maslakov; Leonid V. Velikov; D. Yu. Zaroslov

doi:10.1117/12.23695

1 October 1990 Excimer laser assisted deposition of SiO2-structures on semiconductor substrates from siliconorganic films

Vladimir G. Ageev, Dang Quoc Trung, Vitali I. Konov, A. V. Kuzmichov, A. I. Maslakov, Leonid V. Velikov, D. Yu. Zaroslov

Author Affiliations +

Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23695
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan

Abstract

New approach to the surface patterning is considered based on UV laser assisted decomposition of films of silicon organic compounds (SOC). Basic regimes of films processing are studied :the direct laser produced transformation of Soc into the silicon oxide, self— developing (ablating) as well as conventional UV laser lithography. Submicron structures of high quality silicon dioxide are realized

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Vladimir G. Ageev, Dang Quoc Trung, Vitali I. Konov, A. V. Kuzmichov, A. I. Maslakov, Leonid V. Velikov, and D. Yu. Zaroslov "Excimer laser assisted deposition of SiO2-structures on semiconductor substrates from siliconorganic films", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); https://doi.org/10.1117/12.23695

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