Excimer laser assisted etching of silicon surface in electronegative gases

Vladimir G. Ageev; Vitali I. Konov; Andrey I. Krechetov; A. V. Kuzmichov; Alexander M. Prokhorov

doi:10.1117/12.23694

1 October 1990 Excimer laser assisted etching of silicon surface in electronegative gases

Vladimir G. Ageev, Vitali I. Konov, Andrey I. Krechetov, A. V. Kuzmichov, Alexander M. Prokhorov

Proceedings Volume 1352, 1st Intl School on Laser Surface Microprocessing; (1990) https://doi.org/10.1117/12.23694
Event: International School on Laser Surface Microprocessing, 1989, Tashkent, Uzbekistan

Abstract

Kinetics of the chemical etching of c—Si surfaces in CC14CHC1a CH2C1 , and CH3C1 vapours induced by 20—ns pulses of the UV radiation of'Ar' and KrF excimer lasers is studied. The anomalous high rates of the solid surface etching more than 10 per pulse are realized. Non —thermal mechanisms of the UV photon enhancement of gas—surface reactions are discussed.

Citation Download Citation

Vladimir G. Ageev, Vitali I. Konov, Andrey I. Krechetov, A. V. Kuzmichov, and Alexander M. Prokhorov "Excimer laser assisted etching of silicon surface in electronegative gases", Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); https://doi.org/10.1117/12.23694

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