Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers

Ralf Peter Brinkmann; Karl H. Schoenbach; Hans-Joachim Schulz

doi:10.1117/12.24401

1 March 1991 Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers

Ralf Peter Brinkmann, Karl H. Schoenbach, Hans-Joachim Schulz

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24401
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The local thermodynamic equilibrium as well as the non-equilibrium properties of crystal defects in semiconductors are discussed with emphasis on such configurations that allow for multiple ionization and electronic excitation. A system of rate equations is developed which describes the temporal change of the occupation numbers of the different energy levels; it includes the processes of free charge carrier capturing as well as thermal emission. The results of the investigation can be used, for example, to obtain a more realistic dynamic description of the occupation of the chromium induced energy levels in gallium arsenide which play an important role as recombination centers in material for fast photonic switching.

Citation Download Citation

Ralf Peter Brinkmann, Karl H. Schoenbach, and Hans-Joachim Schulz "Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24401

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