Localization of hot spots in silicon devices with a laser scanning microscope

Harald Bergner; A. Krause; Uwe Stamm

doi:10.1117/12.24435

1 March 1991 Localization of hot spots in silicon devices with a laser scanning microscope

Harald Bergner, A. Krause, Uwe Stamm

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24435
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A novel method is demonstrated which allows to localize and clearly identify hot spots in integrated circuits with high spatial resolu-'' tion. The method is based on the optical beam induced current technique (OBIC) using a laser scanning microscope with infrared illumination. Due to the OBIC contrast thermal defects can be recognized in a difference image of two OBIC images measured at different background temperatures of the circuit. The method is applied to thermal mapping of a CMOS NOR-gate. Calibrating the OBIC signal in dependence on the circuit temperature the absolute temperature of the hot spot is deter mined.

Citation Download Citation

Harald Bergner, A. Krause, and Uwe Stamm "Localization of hot spots in silicon devices with a laser scanning microscope", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24435

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