Bistability of the Sn donor in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy

Pierre J. L. Gibart; Don L. Williamson

doi:10.1117/12.24497

1 February 1991 Bistability of the Sn donor in Al_xGa_1-xAs and GaAs under pressure studied by Mossbauer spectroscopy

Pierre J. L. Gibart, Don L. Williamson

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24497
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Deep donor levels are observed in Al(x)Ga(1-x)As for x of greater than 0.22 and GaAs under hydrostatic pressure (for p of more than 2GPa). Persistent photoconduction (PPC) is the most striking feature of this deep donor, the DX center. Upon illumination at low temperature, the free-electrons concentration increases and remains at this new value even after the light is off. Basically the DX centers are photoionized and one (or several) electrons per center are transferred to the conduction band. The bistable character of the donor which involves two electronic configurations is studied by Moessbauer spectroscopy (MS). Electronic wavefunctions, near-neighbor geometries and lattice vibrational properties can be probed. Moessbauer spectroscopy is used to observe the Sn DX center in Al(x)Ga(1-x)As near x

Citation Download Citation

Pierre J. L. Gibart and Don L. Williamson "Bistability of the Sn donor in Al_xGa_1-xAs and GaAs under pressure studied by Mossbauer spectroscopy", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24497

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