Paper
1 February 1991 Efficient optical waveguide modulation based on Wannier-Stark localization in a InGaAs-InAlAs superlattice
Erwan Bigan, Michel Allovon, Madeleine Carre, Alain Carenco, Paul H. Voisin
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24564
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
We report the observation of Wannier-Stark localization in a InGaAs-InAlAs superlattice waveguide. Using the oblique transition connecting electrons and holes localized in adjacent wells we achieve efficient intensity modulation at 1 . 57jim incident light wavelength under TE polarization mode. A 16 dB extinction ratio is obtained by applying a 0. 75V drive voltage to a 320 j. tm long waveguide. On-state attenuation is only 3 dB.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erwan Bigan, Michel Allovon, Madeleine Carre, Alain Carenco, and Paul H. Voisin "Efficient optical waveguide modulation based on Wannier-Stark localization in a InGaAs-InAlAs superlattice", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24564
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KEYWORDS
Waveguides

Superlattices

Modulators

Absorption

Modulation

Optoelectronic devices

Quantum wells

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