III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation

Samir Aboulhouda; Manijeh Razeghi; Jean-Pierre Vilcot; Didier J. Decoster; M. Francois; Sophie Maricot

doi:10.1117/12.24561

1 February 1991 III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation

Samir Aboulhouda, Manijeh Razeghi, Jean-Pierre Vilcot, Didier J. Decoster, M. Francois, Sophie Maricot

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24561
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies is presented. The photoreceiver includes a GaInAs/GaAs M.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a silicon substrate. In comparison with a PIN photodiode loaded with a 50 Omega resistor, approximately 10 dB gain has been obtained at 7 GHz.

Citation Download Citation

Samir Aboulhouda, Manijeh Razeghi, Jean-Pierre Vilcot, Didier J. Decoster, M. Francois, and Sophie Maricot "III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24561

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