New materials for high-performance III-V ICs and OEICs: an industrial approach

Gerard Maric Martin; Peter M. Frijlink

doi:10.1117/12.24446

1 February 1991 New materials for high-performance III-V ICs and OEICs: an industrial approach

Gerard Maric Martin, Peter M. Frijlink

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24446
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

High performance IC''s and OEIC''s rely on complex epitaxial heterostructures with tight bandgap engineering. Related developmentandproduction requires notonly very homogeneous materials but manufacturing ofqualified batches of similar wafers. Furthermore in most cases critical feature size of devices is submicronic which puts forward another important requirementconcerning surface contamination ofwafers. Thispaperpresents the breakthrough we have achieved in the above fields using especially the novel MOVPE multiwafer PLANET reactor.

Citation Download Citation

Gerard Maric Martin and Peter M. Frijlink "New materials for high-performance III-V ICs and OEICs: an industrial approach", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24446

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