Photodetectors: how to integrate them with microelectronic and optical devices

Didier J. Decoster; Jean-Pierre Vilcot

doi:10.1117/12.24499

1 February 1991 Photodetectors: how to integrate them with microelectronic and optical devices

Didier J. Decoster, Jean-Pierre Vilcot

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24499
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Progress in the area of integrated receivers is surveyed, with emphasis on the use of large lattice mismatch epitaxy, selective growth, and planar structure to reduce the technological difficulties associated with the fabrication of these integrated circuits. Some examples of monolithic integration of photodetectors with transistors and optical waveguides are presented. Particular attention is given to a monolithic resonant photoreceiver for long-wavelength and microwave applications, fabricated using lattice mismatch heteroepitaxies and selective growth.

Citation Download Citation

Didier J. Decoster and Jean-Pierre Vilcot "Photodetectors: how to integrate them with microelectronic and optical devices", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24499

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