Spectral hole burning of strongly confined CdSe quantum dots

Christine Spiegelberg; Fritz Henneberger; Joachim Puls

doi:10.1117/12.24498

1 February 1991 Spectral hole burning of strongly confined CdSe quantum dots

Christine Spiegelberg, Fritz Henneberger, Joachim Puls

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24498
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The paper presents ns-hole-burning experiments of the quantum-confined transitions in CdSe quantum dots. By means of respective model calculations the contribution of inhomogeneous and homogeneous broadening of the spectra are deduced at 77 K and room temperature. Tuning the excitation wavelength over a broad spectral range demonstrates a common blocking of three electronic states about 160 meV apart.

Citation Download Citation

Christine Spiegelberg, Fritz Henneberger, and Joachim Puls "Spectral hole burning of strongly confined CdSe quantum dots", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24498

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