GigaHertz RMS current sensors for electromagnetic compatibility testing

Gordon L. Mitchell; Elric W. Saaski; John W. Pace

doi:10.1117/12.24771

1 February 1991 GigaHertz RMS current sensors for electromagnetic compatibility testing

Gordon L. Mitchell, Elric W. Saaski, John W. Pace

Proceedings Volume 1367, Fiber Optic and Laser Sensors VIII; (1991) https://doi.org/10.1117/12.24771
Event: SPIE Microelectronic Interconnect and Integrated Processing Symposium, 1990, San Jose, United States

Abstract

A fiber-optic temperature sensor of the type described by Saaski et al. (1986) was modified to allow current measurements. The current sensor is constructed by bonding a thin (about 1 micron) layer of silicon by a protective Pyrex layer on the bottom and a thin-film temperature sensor on the top. Current flowing through the resistor heats the temperature sensor. With a 1-ohm resistance, the (I-sq R) heating required for a 20-dB signal-to-noise ratio is 100 microW. Sensor parameters were demonstrated to frequencies of 3 GHz for currents in the 10 to 300 mA range. The sensor response time is 10 millisec for an in-circuit sensor and 65 millisec for a noncontacting sensor configuration.

Citation Download Citation

Gordon L. Mitchell, Elric W. Saaski, and John W. Pace "GigaHertz RMS current sensors for electromagnetic compatibility testing", Proc. SPIE 1367, Fiber Optic and Laser Sensors VIII, (1 February 1991); https://doi.org/10.1117/12.24771

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