Contamination and damage of silicon surfaces during magnetron-enhanced reactive ion etching in a single-wafer system

Swie-In Tan; D. B. Colavito

doi:10.1117/12.48965

1 March 1991 Contamination and damage of silicon surfaces during magnetron-enhanced reactive ion etching in a single-wafer system

Swie-In Tan, D. B. Colavito

Author Affiliations +

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48965
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Compred with multi-wafer batch systems single wafer processing holds the potential for lower yield losses in the presence of process instability. However contamination and damage considerations can serve to offset this advantage. We report the results of preliminary experiments designed to assess the impact of particle generation metal contamination structural and electrical degradation of silicon as a results of dielectric and multi-layer resist (MLR) etching in a single wafer magnetron enhanced reactive ion etching (MERlE) system. In this work SIMS AUGER ESCA RBS MOS-CV and Schottky barrier diode results are presented. Also included are data on foreign material (FM) particulate levels.

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Swie-In Tan and D. B. Colavito "Contamination and damage of silicon surfaces during magnetron-enhanced reactive ion etching in a single-wafer system", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48965

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