Emissivity of silicon wafers during rapid thermal processing

Peter Vandenabeele; Karen Maex

doi:10.1117/12.25715

1 April 1991 Emissivity of silicon wafers during rapid thermal processing

Peter Vandenabeele, Karen Maex

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25715
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

The emissivity of silicon wafers was measured for two specfic conditions. Firstly the emissivity of silicon wafers below 700 C was studied. Also the influence of front-side and back-side implantation on the emissivity was studied. It was found that a highly doped wafer or an epi-wafer with a higly doped bulk have a high emissivity which is independent of temperature. Secondly the influence of back-side roughness on emissivity was measured. It was shown the the intrinsic emissivity for a silicon wafer (outside the chamber) is merely changed for moderate roughnesses. On the other hand the effective emissivity inside a reflective chamber is sensitive to back-side roughness even for moderate roughnesses. Finally it was shown that wafers with an anti-reflective back-side layer (e. g. quarter wavelength oxide or oxinitride) behave like a nearly perfect black-body at the pyrometer wavelength. 1.

Citation Download Citation

Peter Vandenabeele and Karen Maex "Emissivity of silicon wafers during rapid thermal processing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25715

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