Paper
1 July 1991 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays
Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, Koji Tominaga
Author Affiliations +
Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43823
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 micrometers - thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 micrometers -spaced neighboring elements is only 1.0% at 100 mW.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takao Yamaguchi, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, and Koji Tominaga "100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43823
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KEYWORDS
Semiconductor lasers

Laser applications

Heatsinks

Pulsed laser operation

Laser development

Silicon

Cladding

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