Evaluation of a photoresist process for 0.75-micron g-line lithography

Jack S. Kasahara; Mircea V. Dusa; Thiloma Perera

doi:10.1117/12.44809

1 July 1991 Evaluation of a photoresist process for 0.75-micron g-line lithography

Jack S. Kasahara, Mircea V. Dusa, Thiloma Perera

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44809
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A consistent 0.75 micron lithography process was developed for implementation in an existing technology environment. Prolith/2 modeling parameters were experimentally measured and photoresist simulations were performed to gain confidence in the modeling program. Experimental results fulfilled a proposed set of production process requirements, and a consistent three-quarter-micron, g-line process can be implemented in the manufacturing environment.

Citation Download Citation

Jack S. Kasahara, Mircea V. Dusa, and Thiloma Perera "Evaluation of a photoresist process for 0.75-micron g-line lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44809

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