Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess

Axel Huelsmann; G. Kaufel; Brian Raynor; Klaus Koehler; T. Schweizer; Juergen Braunstein; Michael Schlechtweg; Paul J. Tasker; Theo F. Jakobus

doi:10.1117/12.47357

1 August 1991 Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess

Axel Huelsmann, G. Kaufel, Brian Raynor, Klaus Koehler, T. Schweizer, Juergen Braunstein, Michael Schlechtweg, Paul J. Tasker, Theo F. Jakobus

Author Affiliations +

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47357
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Sub-0.1 micrometers mushroom-shaped gates (T-gates) have been realized with a three-layer resist technique using e-beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy were investigated. Test exposures on SiN-capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography, pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.

Citation Download Citation

Axel Huelsmann, G. Kaufel, Brian Raynor, Klaus Koehler, T. Schweizer, Juergen Braunstein, Michael Schlechtweg, Paul J. Tasker, and Theo F. Jakobus "Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47357

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