Paper
1 June 1991 Novolak resin design concept for high-resolution positive resists
Tsutomu Noguchi, Hidemi Tomita
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Abstract
A new novolak-type photoresist which is applicable to excimer laser lithography has been developed. This resist consists of a naphthoquinonediazide-4-sulfonyl ester(NQD-4) and branched novolak resins, which are synthesized in an excess formalin/m-cresol molar ratio (1approximately equals 2) condition. The branched novolak resin-NQD-4 pendent resist (BNP resist) has about two times higher sensitivity than a conventional novolak resist (PR-1024MB) and exhibits clearly a surface development induction, which affords higher (gamma) -values. Copolymerization of hydroquinone (HQ) improves the sensitivity, resist profile, and mask linearity of the BNP resist. The BNP-HQ resist has a resolution capability of 0.35 micrometers lines and spaces with a KrF excimer laser sensitivity of about 170 mJ/cm2. Therefore, our design concept of novolak resin is applicable to high resolution positive resists and especially to excimer resists.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Noguchi and Hidemi Tomita "Novolak resin design concept for high-resolution positive resists", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46366
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Cited by 1 scholarly publication.
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KEYWORDS
Excimer lasers

Photoresist materials

Excimers

Lithography

Photography

Scanning electron microscopy

Photoresist processing

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