Interface stress at thin film semiconductor heterostructures

Taneo Nishino

doi:10.1117/12.47306

1 November 1991 Interface stress at thin film semiconductor heterostructures

Taneo Nishino

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47306
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The interface stress at thin film semiconductor heterostructures has been examined for three technologically important ZnSSe/GaAs, InGaPAs/GaAs, and AlGaAs/GaAs heterostructures. For characterization of the interface stress we have developed a new high-sensitivity method using the characteristic Cr-related luminescence lines in GaAs crystal. Based on a series of experimental results obtained with these three semiconductor heterostructures, the origin of the interface stress has been identified, the results showing that the interface stress in the case of ZnSSe/GaAs is well explained by thermal stress and the interface stress of InGaPAs/GaAs and AlGaAs/GaAs by lattice-mismatched stress.

Citation Download Citation

Taneo Nishino "Interface stress at thin film semiconductor heterostructures", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47306

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