Research on the temperature of thin film under ion beam bombarding

Yun-Fei Zhao; Shuzi Sun; Shi Jin Pang

doi:10.1117/12.47334

1 November 1991 Research on the temperature of thin film under ion beam bombarding

Yun-Fei Zhao, Shuzi Sun, Shi Jin Pang

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47334
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Temperature measurement of thin films under ion beams bombardment has been made by a new method. 100 Kev Ar ion have been used to bombard the Al thin films deposited on Fe₈Co₃₉Ni₃₁Si₆B₁₆ non-crystal thin straps. Several data of the temperature were obtained indirectly by analyzing the substrate by means of DTA. When the intensity of the ion beams were 5 W/cm² and 12 W/cm², the temperatures were 700 K and 806 K. Starting from the conservation of energy in equilibrium state, a theoretical equation has been derived. Chosen reasonable approximation, the theoretical curve of the temperature depending on the ion beam power comparatively conforms the experimental results.

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Yun-Fei Zhao, Shuzi Sun, and Shi Jin Pang "Research on the temperature of thin film under ion beam bombarding", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47334

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