Nanoscale semiconductor impurity characterization by scanned probe microscopy (Invited Paper)

K. S. Mak; Clayton C. Williams

doi:10.1117/12.134890

1 February 1992 Nanoscale semiconductor impurity characterization by scanned probe microscopy (Invited Paper)

K. S. Mak, Clayton C. Williams

Proceedings Volume 1556, Scanning Microscopy Instrumentation; (1992) https://doi.org/10.1117/12.134890
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Measurement of impurity dopant density in silicon with lateral resolution on the 100 nm scale has been demonstrated with the scanning capacitance microscope (SCM). This approach is based on the measurement of local capacitance changes between a 50 nm tip and semiconductor surface as the voltage bias is changed and/or the tip is scanned laterally across the surface. Capacitance versus voltage measurements provide a means to quantitatively determine local dopant density. We describe the scanning capacitance microscope and its application to dopant density measurements in semiconductors. We review the application of SCM to the measurement of dopant density on the nanometer scale.

Citation Download Citation

K. S. Mak and Clayton C. Williams "Nanoscale semiconductor impurity characterization by scanned probe microscopy (Invited Paper)", Proc. SPIE 1556, Scanning Microscopy Instrumentation, (1 February 1992); https://doi.org/10.1117/12.134890

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